半导体激光器改进电路模型的大信号验证(3)
发布时间:2021-06-11
发布时间:2021-06-11
摇第1期田学农,高建军:半导体激光器改进电路模型的大信号验证57
Fig.
performance4.
oftheinputportofthelaserisshowninFig.Fig.54摇comparesMeasuedtheandmodeledsimulatedandI-Vcharacteristics
coefficientmeasuredreflection
30forthelaserinthefrequencyrangethatGHzunderthebiascurrentof20mA.Itcan0.be1GHz-conventionaltheimprovedmodels,modelespeciallyismore
fortheaccuratemagnitudethanfoundtheofthe
Fig.5摇Comparisonofmodeledandmeasured
reflectionFig.6coefficientshowsreflectiontheofvariationcoefficientthelaserofforthethelaser
withmagnitudedifferentofbias
the
Fig.6摇theComparisonlaseratdifferentofbiasconditions
coefficientfor
currentsshown3摇increasesthatusingConclusions
withthetheproposedmodelinthispaper.Itisthemagnitudeincreasingofofthethereflectionbiascurrents.
coefficientGaoisAnrealizedimplementationusingtheofSDDthelasercomponentmodelinproposedADS.Theby
convergencetheconventionalofcounterpart.theimplementationSimulationisresultsmorerobustshowthan
that
reflectionmodelagreesrange
coefficientwellwithofthethemeasuredresultsandtheconventionalcan
models.be
more
Itisaccurately
lasersinthefirstpublishedsimulated
lowfrequencythelargesignalverificationofGao爷smodelresultthan
aswe
ofknow.fortheThedesigncharacterizationproposedimplementationofopto鄄electricalofthewouldbehelpfulsystemssemiconductorsuchaslasersradioover
andfibertheAcknowledgement
applications.
LaboratoryThisworkwassupportedbytheStateKey
andNetworksof,AdvancedShanghaiOpticalJiaoTongCommunicationUniversity,China.SystemsReferences:
[1]摇NikosPleros,KonstantinosVyrsokinos,KostasTsagkaris,etal.A60
GHzcationRadio鄄Over鄄FiberNetwork[J].JournalArchitectureofLightwaveforSeamlessTechologyCommuni鄄[2]
27(12):with1957-1967.
HighMobility,2009,JoffrayGuillory,EricTanguy,AnnaPizzinat,etal.A60GHzWireless[3]JournalYuXianbinofHomeLightwaveAreaNetwork,TimothyTechnologywithBraidwood,2011RadioGibbon,29over,(16Idelfonso):Fiber2482-2488.Repeaters[J].TafurMonroy.Bidirectional
DownlinkandRFRadio鄄Over鄄Fiber
Oscillator鄄FreeUplinkSytem
Usingwith
aReflectivePhase鄄Modulation
SOA[J].
[4]
IEEERodneyPhotonicsSTuckerTechnology,DavidJPope.LettersMicrowave,2008,20(24Circuit):2180-2182.
ModelsofSemi鄄conductorInjectionLasers[C]//IEEETransMicrowave[5]TechnologyMohammad
,1983Hasan
,MTT-31Yavari(3):,
289-294.TheoryandVahid
Ahmadi.Circuit鄄Level
ImplementationLaser[C]//IEEEofSemiconductorJournalofselectedSelf鄄AssembledtopicsQuantuminQuantumDot[6]
ElectronicsGaoJianjun.,2009High,15Frequency(3):774-779.
ModelingandParameterExtractionforVertical鄄Cavity[7]TechnologyGaoJianjun.,2012SurfaceMicrowave,30(11Emitting):Lasers[J].JournalofLightwaveModeling1757-1763.
andParameterExtractionMethodforQuantum鄄WellLasers[J].JournalofLightwaveTechnology,
上一篇:智能手机测试题