56

DScandacurrentsourceIINareadded.ThediodeDScisusedtosimulatetheinputelectricalcharacteristic.IINisthecurrentinjectedintotheactiveregionofthelasersandisequaltothecurrentpassedthroughthediodeDSc.Withthisnewmodeltheelectricalpartandthe

Whereττnisthecarrierrecombinationlifetime,p

isthephotolifetime,茁isthespontaneousemissioncouplingcoefficient,着isthegaincompressionfactor,Nomistheintothelaser,ponentofADSasshowninFig.

2.

carriertransparencydensity,IAisthecurrentinjected

Equations(3)and(4)arewrittenintotheSDD

equationsandisimplementedusingSDDcomponentinADS.Toimprovetheconvergenceofthemodel,thefollowingtransformationistakenfortherateequations.

N=Ne[exp(qV/浊kT)]S=祝Sn(m+啄)2

(1)(2)

Themodelingofintrinsiclaserisbasedontherate

Fig.1摇Improvedmodelofsemiconductorlasers

WhereNisthecarrierdensity,Sisthephotondensity,Visthevoltageacrossthelaser,浊isthediodeidealitynewvariableforthetransformation,啄isasmallconstantconstant,and丐istheopticalconfinement

factor.areobtained

factor,kisBoltzmannconstant,Tisthelaser爷stemperature,Neistheequilibriumcarrierdensity,misatoimprovetheconvergence,Snisthenormalization

Afterthetransformation,thefollowingequations

Fig.2摇SDDimplementationoftheintrinsicsemiconductorlasers

IANeexp(qV/浊kT)V1

={--dte(q/浊kT)exp(qV/浊kT)V忆τn

g0[Neexp(qV/浊kT)-Nom]·[1-着祝Sn(m+啄)2]·

祝Sn(m+啄)2}

(3)

2摇SimulationResults

ACcharacteristicsandSparametersofthelaserscanbesimulatedwiththesetup.

Usingtheproposedmodel

above,the

ThesimulationsetupisshownisFig.3.TheDC,

input

m1

=g0[Neexp(qV/浊kT)-Nom][1-着祝Sn(m+啄)2]·dt2Sn

1茁Neexp(qv/浊kT)

祝Sn(m+啄)-(m+啄)+·(4)

(m+啄)ττpnn

characteristicsofalaserissimulatedandanalyzedin

ADS.Theintrinsicandparasiticparametersofthelasers

I-V