第37卷第1期2014年2月

ChineseJournalofElectronDevices

电子器件

Vol.37摇No.1Feb.2014

LargeSignalVerificationofanImprovedCircuitModelforSemiconductorLasers*

TIANXuenong1,GAOJianjun2*

(1.CollegeofElectronicandInformationEngineering,SuzhouUniversityofScienceandTechnology,SuzhouJiangsu215009,China;

2.SchoolofInformationScienceandTechnology,EastChinaNormalUniversity,Shanghai200241,China)

Abstract:Animplementationofanimprovedcircuitmodelofsemiconductorlaserswhichcanmodelthereflectioncoefficientmoreaccuratelyispresentedandthecomparisonbetweentheimprovedmodelandtheconventionalcounterpartismade.TheSDD(SymbolicDefinedDevices)componentinADS(AdvancedDesignSystems)isusedandthetransformationoftherateequationsistakentoimprovetheconvergenceofthemodel.Thereflectioncoefficientofthelasersissimulatedwiththemodelunderdifferentbiasconditionsandiscomparedwiththeexperimentalresults.Theaccuracyoftheimprovedmodelisfirsttimeverifiedinlargesignalsimulation.Keywords:circuitmodel;semiconductorlasers;rateequations;convergenceEEACC:6140摇摇摇摇doi:10.3969/j.issn.1005-9490.2014.01.014

半导体激光器改进电路模型的大信号验证

田学农1,高建军2*

*

(1.苏州科技学院电子与信息工程学院,江苏苏州215009;2.华东师范大学信息科学技术学院,上海200241)

摘摇要:实现了一种可以对于反射系数进行精确建模的半导体激光器电路模型并且与传统模型进行了比较。在ADS

(AdvancedDesignSystems)中使用了SDD(SymbolicDefinedDevices)器件实现,对于速率方程进行了变形以改进模型的收敛性,该模型可用于大信号仿真。对于不同偏置条件下的半导体激光器的反射系数进行了仿真并且和测量结果进行了对比。首次在大信号仿真中验证了改进模型的精确性。

关键词:电路模型;半导体激光器;速率方程;收敛性

中图分类号:TN248.4摇摇摇摇文献标识码:A摇摇摇摇文章编号:1005-9490(2014)01-0055-04摇摇Modelingofsemiconductorlasersiscrucialforthe

ofthereflectioncoefficientatlowfrequencydomainagreebetterwiththemeasurementresultsthanconventionalmodels.However,thatmodelisonlyverifiedwithsmallsignalcircuitmodeloflasersandthelargesignalsimulationwithTucker爷scircuitmodelofpaperweverifiedGao爷sideawithaSDD(SymbolicDefinedDevices)basedmodelinADS(Advanced

designersofopto鄄electricalsystemssuchasradiooverfiberlinks[1-3].Variouscircuitmodelsforsemiconductorlasershavebeenproposedtoreflectthecharacteristicsoflasersinthesimulation.Althoughthemodelsproposedsofarcanmeettherequirementstosomeextentintheengineeringdesign,theyarealwaysonlyvalidundersomeconstraintconditionsandalwayshaveerrorswiththemeasurementresults.Thedevelopmentofmoreaccurateandcomprehensivemodelisnecessary[4-6].

Someearliermodelsforsemiconductorlasershaveerrorsforreflectioncoefficientofsemiconductorlasersinlowfrequencydomainwiththemeasurementresults.Prof.GaoJianjunproposedanewmodelwhichintroduceadiodeattheinputportoflasersandtheopticalpartandelectricalpartofthemodelisseparated[7].UsingGao爷smodelthesimulationresults

项目来源:上海市闵行区人才发展专项资金项目收稿日期:2013-04-11摇摇修改日期:2013-04-26

thelaserisnotconvergedatsomebiascurrents.InthisDesignSystems).Theconvergenceofthemodelismorerobustanditcanaccuratelysimulatethelowfrequencyreflectioncoefficientofsemiconductorlasersinlargesignalsimulation.

1摇ModelDevelopment

paredwithconventionalmodelsforsemiconductorlasers,anindependentSchockleydiode