GS8640V32T-250中文资料(13)

时间:2025-03-10

GS8640V18/32/36T-300/250/200/167

Logic Levels

Parameter

VDD Input High VoltageVDD Input Low VoltageVDDQ I/O Input High VoltageVDDQ I/O Input Low Voltage

Symbol

VIHVILVIHQVILQ

Min.

0.6*VDD–0.30.6*VDD–0.3

Typ.

————

Max.

VDD + 0.30.3*VDDVDDQ + 0.30.3*VDD

Unit

VVVV

Notes

111,31,3

Notes:

1.The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-tions quoted are evaluated for worst case in the temperature range marked on the device.

2.Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.3.VIHQ (max) is voltage on VDDQ pins plus 0.3 V.

Undershoot Measurement and Timing

VIH

VDD + 2.0 V

VSS50%VSS – 2.0 V

20% tKC

VIL50%VDD

Overshoot Measurement and Timing

20% tKC

Capacitance

(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)

Parameter

Input CapacitanceInput/Output CapacitanceNote:

These parameters are sample tested.

Symbol

CINCI/O

Test conditions

VIN = 0 VVOUT = 0 V

Typ.

46

Max.

57

Unit

pFpF

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