GS8640V32T-250中文资料(13)
时间:2025-03-10
时间:2025-03-10
GS8640V18/32/36T-300/250/200/167
Logic Levels
Parameter
VDD Input High VoltageVDD Input Low VoltageVDDQ I/O Input High VoltageVDDQ I/O Input Low Voltage
Symbol
VIHVILVIHQVILQ
Min.
0.6*VDD–0.30.6*VDD–0.3
Typ.
————
Max.
VDD + 0.30.3*VDDVDDQ + 0.30.3*VDD
Unit
VVVV
Notes
111,31,3
Notes:
1.The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-tions quoted are evaluated for worst case in the temperature range marked on the device.
2.Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.3.VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Undershoot Measurement and Timing
VIH
VDD + 2.0 V
VSS50%VSS – 2.0 V
20% tKC
VIL50%VDD
Overshoot Measurement and Timing
20% tKC
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Input CapacitanceInput/Output CapacitanceNote:
These parameters are sample tested.
Symbol
CINCI/O
Test conditions
VIN = 0 VVOUT = 0 V
Typ.
46
Max.
57
Unit
pFpF
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