MOSFET-Only Wideband LNA with Noise Cancelling and Gain Opti(4)

全CMOS噪声抵消和增益优化的宽带LNA

Figure 4. LNA input impedance (real part).

Figure 5. LNA input impedance (imaginary part).

Figure 6. LNA Gain.

For the noise figure simulation we have considered kf = 4x10-23V2Hz and αf = 1.2 for the 130 nm technology [7, 8].

Figure 7. LNA noise figure.

IV.MOSFET-ONLY LNA

A.Initial Design

In the MOSFET-only LNA (Fig. 8) the load resistors are replaced by PMOS transistors (M3, M4) operating in the triode region, which are modeled ideally by a resistor between the drain and source ,

where gds is the channel conductance. To make a comparison with the LNA with load resistors, r . The biasing parameters are

ds is dimensioned to have the same resistance value of 200 on table II.

Figure 8. MOSFET-Only LNA

TABLE II. MOSFET PARAMETERS (INITIAL DESIGN)

D ds m bias GS (mA)

(

)

(mS)

(µm)

(µm)

(mv)

(mV)

M1 M2 M3 M4