MOSFET-Only Wideband LNA with Noise Cancelling and Gain Opti(6)

全CMOS噪声抵消和增益优化的宽带LNA

Comparing the results of our optimized MOSFET-only design with those for state-of-the-art inductorless LNAs (table IV), we can conclude it has the advantages of high gain and low noise figure; the drawbacks are a reduction of available bandwidth and the increase of the circuit non-linearity (reduction of IIP3).

TABLE IV. LNACOMPARISON

Band

(nm) (GHz)

Gain (dB)

NF (dB)

IIP3 (dBm)

Power (mW) Balun

ACKNOWLEDGMENT

This work was supported by the Portuguese Foundation for Science and Technology (CTS-UNINOVA and INESC-ID multiannual funding and project TARDE (PTDC/EEA-ELC/65710/2006)) through the PIDDAC Program funds.

REFERENCES

B. Razavi, RF Microelectronics, Prentice-Hall, 1998.

[1]-(sim)(sim) This 130

0.2 - 8

18.2

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work Res work MOS

V.DISCUSSION AND CS

ONCLUSIONS

In this paper we have presented a MOSFET-only

implementation of an LNA based on the combination of a common-gate and a common-source stage. We have derived simple equations for gain, input matching and noise figure, which are validated through simulation for our range of frequencies.

In MOSFET-only LNAs the replacement of resistors by transistors, reduces the area and cost, and minimizes the effect of process and supply variation and of mismatch [6]. Moreover, the LNA gain can be controlled by changing the bias of the PMOS transistors used to replace the resistors (this is still under investigation).

This new approach adds a new degree of freedom, which can be used to optimize the LNA gain and minimize the noise figure: we can obtain a higher gain than using resistors for the same DC voltage drop. As a drawback this approach increases the distortion, which can be seen by the decrease of the IIP3 value.

Simulation results of a circuit implemented in a 130 nm CMOS technology are presented. For comparison, we also show the performance of a conventional LNA with resistors. Both circuits have the same power consumption of 4.8 mW. For the MOSFET-only LNA we obtain a gain improvement of 2 dB (gain of 19.8 dB), and a reduction in NF of about 0.5 dB (below 1.9 dB in the frequency range).

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S. Blaakmeer, E. Klumperink, D. Leenaerts, and B. Nauta, “Wideband Balun-LNA with Simultaneous Outputs Balancing, Noise-Canceling and Distortion-Canceling”, IEEE J. Solid-State Circuits, vol. 43, no. 6, pp. 1341-1350, June 2008.

[10]J.-H. C. Zhan and S. S. Taylor, “A 5 GHz resistive-feedback CMOS LNA for low-cost multi-standard applications,” in IEEE ISSCC 2006 Dig. Tech. Papers, Feb. 2006, pp. 200–201.

[11]

R. Bagheri, A. Mirzaei, S. Chehrazi, M. E. Heidari, M. Lee, M. Mikhemar, W. Tang, and A. A. Abidi, “An 800-MHz–6-GHz software-defined wireless receiver in 90-nm CMOS,” IEEE J. Solid-State Circuits, vol. 41, no. 12, pp. 2860–2876, Dec. 2006.

[12]P.-I. Mak and R. Martins, “Design of an ESD-Protected Ultra-Wideband LNA in Nanoscale CMOS for Full-Band Mobile TV Tuners”, IEEE Trans. Circuits Syst. I, vol. 56, pp. 933-942, May 2009.

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A. Amer, E. Hegazi, and H. Ragai, “A low power wideband CMOS LNA for WiMax”, IEEE Trans. Circuits Syst. II, vol. 54 nº 1, pp. 4-8, Jan. 2007.

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