AT45D081中文资料(9)

AT45D081

15Algorithm for Randomly Modifying Data START

MAIN MEMORY PAGE

to BUFFER TRANSFER

(53H, 55H)INCREMENT PAGE ADDRESS POINTER

(2)Auto Page Rewrite

(2)

(58H, 59H)END

provide address of

page to modify

If planning to modify multiple bytes currently stored within a page of the Flash array

MAIN MEMORY PAGE PROGRAM

(82H, 85H)

BUFFER WRITE

(84H, 87H)

BUFFER to MAIN

MEMORY PAGE PROGRAM

(83H, 86H)

Figure 2

Notes: 1.

T o preserve data integrity, each page of the DataFlash memory array must be updated/rewritten at least once within every 10,000 cumulative page erase/program operations.2.

A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite com-mand must use the address specified by the Page Address Pointer.3.Other algorithms can be used to rewrite portions of the Flash array. Low power applications may choose to wait until

10,000 cumulative page erase/program operations have accumulated before rewriting all pages of the Flash array. See application note AN-4 (“Using Atmel’s Serial DataFlash”) for more details.

元器件交易网

AT45D08116Ordering Information f SCK

(MHz)

I CC (mA)Ordering Code Package Operation Range Active Standby 10

250.02AT45D081-RC 28R Commercial (0°C to 70°C)AT45D081-TC 32T 10250.02AT45D081-RI

28R Industrial (-40°C to 85°C)

AT45D081-TI 32T Package Type

28R

28-Lead, 0.330” Wide, Plastic Gull-Wing Small Outline Package (SOIC)32T

32-Lead, Plastic Thin Small Outline Package (TSOP)元器件交易网