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发布时间：2021-06-08

August, 2010

RF Power Amplifiers for Base-Station applications: General Introduction and New Products Update NET-F0967 Suhail AgwaniPortrfolio ManagerTM

Freescale, the Freescale logo, AltiVec, C-5, CodeTEST, CodeWarrior, ColdFire, C-Ware, mobileGT, PowerQUICC, StarCore, and Symphony are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat.& Tm. Off. BeeKit, BeeStack, CoreNet, the Energy Efficient Solutions logo, Flexis, MXC, Platform in a Package, Processor Expert, QorIQ, QUICC Engine, SMARTMOS, TurboLink and VortiQa are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.© 2010 Freescale Semiconductor, Inc.

Agenda Cellular

Radio Access Networks

Market Trends Customer Requirements

Freescale s

Products for Radio access

Portfolio Offerings Performance Innovative Customer Solutions

Conclusions

Growth in Radio Access Networks (RANs)Growth in Mobile Subscribers, Millions7,000 6,000 5,000 4,000 3,000 2,000 1,000 2009 2010 2011 2012 2013

Base-Station Shipments, Thousands3,000 2,500 2,000 1,500 1,000 500 0 TD-SCDMA W-CDMA CDMA2000 GSM

Infonetics Research, 2010

2009

2010

2011

2012

2013

Mobile Infrastructure Market Outlook Market’s

Current State:

Mobile subscriptions grew 184M in 1Q10 to a total of 4.8B. 45% of new subscribers came from CHN/IND. Global penetration is now at 70%. Voice remains the main source of revenue for most Operators, however, for many large operators data revenue already exceeds 25% of net revenue Global mobile data traffic surpassed voice traffic in 2009 WCDMA subscriptions grew 39M in 1Q10 to total of 490M Represents only 10% of total subscriptions HSPA coverage available for only 25% of world s population

What’s

Next?

Mobile data traffic has grown 3x in the

past 2 years and is expected to continue to double annually for the next five Broadband to All: Subscribership for Mobile broadband to overtake Fixed line Over 60 LTE network commitments across the world, target downlink speeds up to 100Mbps Infrastructure upgrades Over 5 million legacy BTS deployed today, over 30% will need to be replaced/upgraded in the next few years. Additional demand driven by increased Data uptake and Subscribers

RF Spectrum used in‘Tower to Handset’ Communication700MHz2700MHz Range of Radio Frequencies typically used in cellular communication Examples of Commonly used 2G and 3G Bands GSM 850 CDMA 850 GSM 900 GSM 1800 GSM 1900 CDMA 1900 869-894MHz (Cellular) 869-894MHz (Cellular 925-960MHz 1805-1880MHz (DCS) 1930-1990 MHz (PCS) 1930-1990 MHz (PCS) 200KHz/Channel 1.25MHz/Channel 200KHz/Channel 200KHz/Channel 200KHz/Channel 1.25MHz/Channel

2G/3G

WCDMA 1900WCDMA 2100 TD-SCDMA–F TD-SCDMA–A

1930-1990 MHz (PCS)2110-2170 MHz (UMTS) 1880-1920 MHz 2010-2025MHz

3.84MHz/Channel3.84MHz/Channel 1.28MHz/Channel 1.28MHz/Channel UHF Digital Dividend BWA

Upcoming

698-806 MHZ, 790-862 MHz 2305-2400MHz

2500-2690MHz5

LTETM

Cellular Communications– Industry Trends

Operators

Impact to RF Amplifiers

Very low ARPU voice servicesData services driving 3.5G/ 4G New frequency bands/ spectrum

BOM Cost reduction

New Frequency bands (portfolio)Multi Carrier/ Multi Mode PA s Wider Band Signals (20+ MHz) Faster time to Market

re-farming (Legacy network evolution)

Lower Power ConsumptionRemote Radio Heads Smaller size Reliability

CAPEX reduction OPEX reduction Go“Green”

Freescale, the Freescale logo, AltiVec, C-5, CodeTEST, CodeWarrior, ColdFire, C-Ware, mobileGT, PowerQUICC, StarCore, and Symphony are trademarks of Freescale Semiconductor, In

c., Reg. U.S. Pat.& Tm. Off. BeeKit, BeeStack, CoreNet, the Energy Efficient Solutions logo, Flexis, MXC, Platform in a Package, Processor Expert, QorIQ, QUICC Engine, SMARTMOS, TurboLink and VortiQa are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.© 2010 Freescale Semiconductor, Inc.

Freescale’s RF Products for Cellular InfrastructureCellular Products: RF

Power Transistors are the key component of RF power amplifiers employed in cellular infrastructure to broadcast cellular signals over a large area. Freescale s

RF Cellular portfolio covers all major bands from 700 MHz– 2700 MHz. Products offered for 2G, 3G and 4G standards including GSM, CDMA, WCDMA, CDMA2000, TD-SCDMA, and LTE. Freescale s Leadership: Market

leader in wireless infrastructure power transistors with a market share of 63%*. Freescale s Vision: To provide leadership products, with the best cost and highest performance, to enable substantial system level cost reductions.*Sources: ABI, 2009Freescale, the Freescale logo, AltiVec, C-5, CodeTEST, CodeWarrior, ColdFire, C-Ware, mobileGT, PowerQUICC, StarCore, and Symphony are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat.& Tm. Off. BeeKit, BeeStack, CoreNet, the Energy Efficient Solutions logo, Flexis, MXC, Platform in a Package, Processor Expert, QorIQ, QUICC Engine, SMARTMOS, TurboLink and VortiQa are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.© 2010 Freescale Semiconductor, Inc.TM

Freescale Oak Hill Fab– 8” Austin, Texas

RF Division’s Global Footprint

Freescale Tokyo Marketing, Application

Freescale Tempe Design, Packaging, Semiconductor Technology, Engineering, Reliability Marketing, Modeling Application, System

Freescale Seoul Marketing, Application

Freescale Shanghai Marketing, Applications

Freescale Chengdu Design Center

Freescale Toulouse Design, Engineering Marketing, Modeling Applications, System

Freescale Kuala Lumpur Final MfgKuala Lumpur, Malaysia

Freescale Tianjin Final Mfg Tianjin, China

Why Choose Freescale’s RF Products

reNet, the Energy Efficient Solutions logo, Flexis, MXC, Platform in a Package, Processor Expert, QorIQ, QUICC Engine, SMARTMOS, TurboLink and VortiQa are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.© 2010 Freescale Semiconductor, Inc.

Product Innovation Portfolio

Diversity

Dedicated, performance-optimized portfolio for all popular frequency bands Over 220 Standard products; Line up coverage from 700MHz to 2700MHz Cellular bands

GPAs Drivers– two stage ICs and single stage discrete Finals– ICs and Discrete solutions for High power, high efficiency applications

Technology

Innovations

Concurrent investments in Si-LDMOS, and GaN GaAs technologies (HBT, pHEMT) for RF MMICs. Next generation 32V/ 48V LDMOS technologies in development targeting increased system level performance Innovative Doherty solutions targeting upwards of 50% efficiency Leadership

in packaging

Only vendor offering cost-effective over-molded plastic packaging for low as well as high power products Surface mount products for automated manufacturing

Industry’s Largest Portfolio of RF Cellular Products Over

220 active part numbers for RF Cellular applications addressing the full spectrum of frequencies and modulation schemes 35 new products in active development Modulation/ Freq (GHz) SC/MC GSM CDMA TD-SCDMA W-CDMA LTE WiMAXFreescale, the Freescale logo, AltiVec, C-5, CodeTEST, CodeWarrior, ColdFire, C-Ware, mobileGT, PowerQUICC, StarCore, and Symphony are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat.& Tm. Off. BeeKit, BeeStack, CoreNet, the Energy Efficient Solutions logo, Flexis, MXC, Platform in a Package, Processor Expert, QorIQ, QUICC Engine, SMARTMOS, TurboLink and VortiQa are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.© 2010 Freescale Semiconductor, Inc.

0.4

0. 7

0. 8

0.9 1.5 1. 8

1. 9

2.0 2. 1

2.3 2.6

GPA Product Selector GuideMMG3006N

50MMG3005N

OIP3 (dBm)

MMG3004NMMH3111N

MMG3014N MMG15241HN MMG3H21N MMG3015N

MMG20271HN

35MMG3012N MMG3009N

MMG3007N MMG3010N MMG3008N MMG3011N MMG30XX 20dB Gain@ 900MHz MMG30XX 15dB Gain@ 900MHz MMGXXXX 15+dB Gain@ 2100MHz HFET/EMode InGaP HBT New Product

25 12 15

P1dB

(dBm)

Select Driver ProductsBand700 - 1000 MHzMWE6IC9080N80 W P1dB/ TO-270WB-14 2 Stage RFIC

1800 - 2000 MHzMD7IC2050N50 W P1dB/ TO-270WB-14 2 Stage RFIC

2100 - 2200 MHz

2300 - 2700 MHzMD7IC2755N50 W P1dB/ TO-270WB-14 2 Stage RFIC

MW7IC2750N

50 WMRFE6S9046N45 W P1dB/ TO-270WB-4 Single Stage Discrete

50 W P1dB/ TO-270WB-14 2 Stage RFIC

MRF7P20040HS40 W P1dB/ NI-780-4 Dual Path Single Stage Discrete

P1dB Output Power

MW7IC2240N40 W P1dB/ TO-270WB-16 2 Stage RFIC

MRF8P9040N40 W P1dB/ TO-270WB-4 Single Stage Discrete

MW7IC2040N40 W P1dB/ TO-270WB-16 2 Stage RFIC

MW7IC930N

MW7IC2725N25 W P1dB/ TO-270WB-16 2 Stage RFIC

30 W

30 W P1dB/ TO-270WB-16 2 Stage RFIC

MW7IC2220N MW7IC915N15 W P1dB/ PQFN 8x8 2 Stage RFIC 20 W P1dB/ TO-270WB-16 2 Stage RFIC

MW6S010N

MRF6S20010N10 W P1dB/ T)-270-2 Single Stage Discrete

10 W

10 W P1dB/ TO-270-2 Single Stage Discrete

MRF6S2701515 W P1dB/ TO-270-2 Single Stage DiscreteDevice Naming Conventions D= Dual Path S= Single Ended H= Air Cavity Low Rth N= Overmolded Plastic

MW7IC008N7 W P1dB/ PQFN 8x8 2 Stage RFIC

MW6S004N4W P1dB/ PLD1.5 Single Stage Discrete

Select Final Stage Discrete ProductsBand700– 800 MHz 850– 1000 MHzMRF8P9300HS320 W P1dB/ NI-1230

1800 - 2000 MHzMRF8S19260HS260 W P1dB/ NI-1230-8

2100 - 2200 MHz

2300 - 2400 MHz

2500 - 2700 MHzDevice Naming Conventions P= Dual Path S= Single Ended H= Air Cavity Low Rth N= Overmolded Plastic

MRF8S18260HS

250 W

MRF8S9260HS260 W P1dB/ NI-880

260 W P1dB/ NI-1230-8

MRF8P18265HS

P1dB Output Power

260 W P1dB/ NI-1230-8

MRF8S9220H220 W P1dB/ NI-780

MRF8S21200HS200 W P1dB/ NI-1230

MRF8S7170N180 W P1dB/ OM780

MRF8S9200N200 W P1dB/ OM-780

MRF8P20160HS160 W P1dB/ NI-780-4

MRF8S9170N180 W P1dB/ OM-780

MRF8S19140HS140 W P1dB/ NI-780

MRF8S21140HS140 W P1dB/ NI-780

MRF8S23120HS140 W P1dB/ NI-780

MRF8S26120HS

150 W

MRF8S7120N125 W P1dB/ OM-780

MRF8S9120N120 W P1dB/ OM-780

MRF8S18120HS120 W P1dB/ NI-780

MRF8S21120HS120 W P1dB/ NI-780

120 W P1dB/ NI-780

MRF8S9100HS110 W P1dB/ NI-780

MRF8P20100HS100 W P1dB/ NI-780-4

MRF8S21100HS100 W P1dB/ NI-780

MRF8P23080HS80 W P1dB/ NI-780-4

MRF8S26060HS65 W P1dB/ NI-400

MRFE6S8046HS

MRF7P20040HS40 W P1dB/ NI-780-4

50 W

45W P1dB/ TO-270-WB-4

Select Final Stage Two Stage RFIC ProductsBand700– 800 MHz 850– 1000 MHz 1800 - 2000 MHz 2100 - 2200 MHz 2300 - 2400 MHz 2500 - 2700 MHzDevice Naming Conventions P= Dual Path S= Single Ended H= Air Cavity Low Rth N= Overmolded Plastic

150 W

P1dB Output Power

MDE6IC7120N120 W P1dB TO-270WBL-14

MDE6IC9120N120 W P1dB TO-270WBL-14

MD7IC18120N120 W P1dB TO-270WBL-14

100 W

MWE6IC9100N110 W P1dB TO-270WB-14

MW7IC18100N100 W P1dB TO-270WB-14

MD7IC21100N100 W P1dB TO-270WB-14

MWE6IC9080N80 W P1dB TO-270WB-14

50 W

MD7IC2050N50 W P1dB TO-270WB-14

MD7IC2755N50 W P1dB TO-270WB-14

HV8 Performance Highlights Doherty

reference designs available for all products in family

Peak

power range of 55– 58 dBm, adequately covers multi-carrier applicationsgain and efficiency

Improved Video

Bandwidth optimization ensures excellent Linearity in Digital Pre-

Distortion (DPD) systems Cost High All

effective over-molded plastic packages output power capability in compact footprint

devices internally input and output matched, to achieve high terminal

impedances Outstanding

device ruggedness and mean time to failure

eStack, CoreNet, the Energy Efficient Solutions logo, Flexis, MXC, Platform in a Package, Processor Expert, QorIQ, QUICC Engine, SMARTMOS, TurboLink and VortiQa are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.© 2010 Freescale Semiconductor, Inc.

HV8 Performance at 900MHzTYPICAL PERFORMANCE Doherty), 920-960MHz(1)

1 Carrier WCDMA, 6.5 dB signal PAR, (2 Device Symmetric

Characteristic

MRF8S9120N

MRF8S9170N

MRF8S9200N

MRF8S9260H

Package Peak Power, dBm

OM-780-2 55.0 50

OM-780-2 56.0 60

OM-780-2 56.5 70

NI-880-2 58.5 110

Average Power, W

Power Gain (2), dB

15.6

16.5

Two Device Doherty

Doherty Efficiency (2),%

Adjacent Channel Power Ratio (2) (DPD Corrected), dBc(1)(2)

-60

In Freescale RF test fixture, 50 Ohm system. VDD= 28 V. Measured at Average Power

HV8 Performance at 1800MHzTYPICAL PERFORMANCE (1) 1 Carrier WCDMA, 6.5 dB signal PAR, (1 Device Symmetric Doherty), 1805-1880MHz

Characteristic

MRF8P20100H

MRF8P20160H

MRF8P18265H

Package Peak Power, dBm

NI-780-4 51 20

NI-780-4 52.7 30

NI-1230-4 55.6 60

Average Power, W

One Device Doherty

Power Gain (2), dB Doherty Efficiency (2),%

16.5

16.3

Adjacent Channel Power Ratio (2) (DPD Corrected), dBc(1)(2)

-60

In Freescale RF test fixture, 50 Ohm system. VDD= 28 V. Measured at Average Power

HV8 Performance at 2100MHzTYPICAL PERFORMANCE Doherty), 920-960MHz(1)

1 Carrier WCDMA, 6.5 dB signal PAR, (2 Device Symmetric

Characteristic

MRF8S21100H

MRF8S21120H

MRF8S21140H

MRF8S21201H

Package Peak Power, dBm

NI-780-2 53.8 40

NI-780-2 54.3 50

NI-780-2 55.0 60

NI-780-2 57.0 80

Average Power, W

Power Gain (2), dB

15.5

Two Device Doherty

Doherty Effici

ency (2),%

Adjacent Channel Power Ratio (2) (DPD Corrected), dBc(1)(2)

-60

In Freescale RF test fixture, 50 Ohm system. VDD= 28 V. Measured at Average Power

High Efficiency ArchitecturesLDMOS Doherty: Asymmetrical Doherty HV8 1GHz– 120W+ 200W transistorsFREQ=960MHz@ 1 C WCDMA,PAR=8dB; PRF8S9120N/ MRF8S9200N Asymmetrical DOHERTY DemonstratorPOWER GAIN (dB)

8S9120N/8S9200N Asymmetrical Doherty AM/AM behavior19 18 17 16 15 14Gain@ 920 MHz Gain@ 960 MHz Gain@ 940MHz

-30 -35 -40 -45 -50 -55 -60 -65 -70 44.5

50 45 40 35 30 49.5

DRAIN EFFICIENCY (%)

-20 -25ACP@ 5MHz(dBc)

ACPL_noDPD ACPU_noDPD ACPL_3M7P ACPU_3M7P Eff

13 36.5 38.5 40.5 42.5 44.5 46.5 48.5 50.5 52.5 54.5 56.5

OUTPUT POWER (dBm)

45.5

46.5

47.5

48.5

Pout avg (dBm)

120+ 200W Doherty performances@ 8db OBO: 49%& -58dBc (WCDMA 1carrier PAR=6.5dB)OMNI 780 Package

HV8 2.1GHz Doherty PerformanceMRF8S21120H+ MRF8S21241H Doherty16.0 15.5 15.0

MRF8S21120H/ MRF8S21240H Asymmetric Doherty CW Drive-Ups@ 28 V, Idq= 0.75 A, Vgsp= 1.1 VMRF8S21120H/ MRF8S21240H Asymmetric Doherty CW Drive-Ups@ 28 V, Idq= 0.75 A, Vgsp= 1.1 V

mmetric Doherty A, Vgsp= 1.1 V

16.0 15.5 15.0

60 55 50 452.11 Eff 2.14 Eff 2.17 Eff

MRF8S21120H/ MRF8S21240H Asymmetric Doherty 14.5 CW Drive-Ups@ 28 V, Idq= 0.75 A, Vgsp= 1.1 V14.0

16.0 15.5 15.0 14.5 14.02.11 Eff

14.5 14.0

Gain (dB)

13.5

12.5 12.0

13.0 12.5 12.0 11.5 11.0 10.5 10.0

30 25

-5