UBIQ MOS QM2542N5

QM2542N5

General Description Product Summery

QM2542N5 is the high performance trench Nch Power MOSFET, providing excellent

Rdson for Battery switch. Applications

Battery Switch

DFN2x3 Pin Configuration Features

High Cell Density Trench Technology DS(ON) Excellent Low R

Green Device Available ESD protected (HBM > 2KV) N-Ch 20V Fast Switching MOSFETs

Thermal Data

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UBIQ MOS QM2542N5

QM2542N5

N-Ch 20V Fast Switching MOSFETs

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Guaranteed Avalanche Characteristics(TJ=25 ℃, unless otherwise noted) Diode Characteristics Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=15V,VGS=10V,L=0.1mH.

4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee.

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UBIQ MOS QM2542N5

QM2542N5

N-Ch 20V Fast Switching MOSFETs

Typical Characteristics

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

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UBIQ MOS QM2542N5

QM2542N5

N-Ch 20V Fast Switching MOSFETs

Fig.7 Drain-Source On-State Resistance Fig.8 Transfer Characteristics

Fig.9 Capacitance Fig.10 Safe Operating Area

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All information provided in this document is subjected to important notice

UBIQ MOS QM2542N5

QM2542N5

N-Ch 20V Fast Switching MOSFETs

Important Notice

UBIQ and its subsidiaries reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.

UBIQ products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgment. However, no responsibility is assumed by UBIQ or its subsidiaries for its use or application of any product or circuit; nor for any infringements of patents or other rights of third parties which may result from its use or application, including but not limited to any consequential or incidental damages. No UBIQ components are designed, intended or authorized for use in military, aerospace, automotive applications nor in systems for surgical implantation or life-sustaining. No license is granted by implication or otherwise under any patent or patent rights of UBIQ or its subsidiaries.

This datasheet is Preliminary datasheet for design reference. For final version datasheet, please contact UBIQ sales.

UBIQ Semiconductor Corp.

Headquarter

9F.,No.5, Taiyuan 1st St. Zhubei City, Hsinchu Taiwan, R.O.C.

TEL : 886.3.560.1818 FAX : 886.3.560.1919

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Sales Branch Office

12F-5, No. 408, Ruiguang Rd. Neihu District, Taipei Taiwan, R.O.C.

TEL : 886.2.8751.2062 FAX : 886.2.8751.5064

All information provided in this document is subjected to important notice

UBIQ MOS QM2542N5

DFN2X3-6L-T0.75-E-TYPE1-A01

Lander pattern design is only for reference

Note:

1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS. 2.

CONTROLLING DIMENSION IS MILLIMETER