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InGaAs-APD/PreampReceiver

FEATURES

Small Form Factor Package(GW): 9 pins coplanar Integrated Design Optimizes Performance atBit Rates up to 12.5Gb/s

High Sensitivity: -27dBm (typ.) High Electrical Differential Output Overload Power: -7dBm (min.)

Low Optical Return Loss (ORL): 27dB (min.) Wide Bandwidth: 10.5GHz (typ.) DC Coupled HBTIC Preamp

Operates in both C and Lwavelength bands

FRM5N141GW

APPLICATIONS

This APD with HBTpreamplifier is intended to function as an optical receiver

at 1,310nm or 1,530-1,610nm in SONET, SDH, DWDM or other optical fiber systemsoperating up to 12.5Gb/s. The typical transimpedance (Zt) value of 1,300 optimizesthe total bandwidth for 10Gb/s application. The detector preamplifier is DC coupledand has a high electrical differential output.

DESCRIPTION

The FRM5N141GW incorporates a high bandwidth InGaAs APD photo diode, a GaAs HBTICamplifier in a hermetically sealed Small Form Factor package (SFF). The APD is processed with modern MOVPE techniques resulting in a reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd YAG welding.

ABSOLUTE MAXIMUM RATINGS (T=25°C)

Note: Since VB may vary from device-to-device, VB data is attached to each device for reference.

Edition 1.2

June 2002

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光纤通信

FRM5N141GW

InGaAs-APD/Preamp

OPTICAL & ELECTRICAL CHARACTERISTICS

(T=25°C, λ=1,550nm, V=-5.2V, V=5V, unless otherwise specified)

Note: All the parameters are measured with 50 , DC-coupled and 0V offset.

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光纤通信

InGaAs-APD/PreampReceiver

Notes

FRM5N141GW

光纤通信

FRM5N141GW

InGaAs-APD/Preamp

Receiver

For further information please contact:

FUJITSU COMPOUND SEMICONDUCTOR, INC.

2355 Zanker Rd.

San Jose, CA95131-1138, U.S.A.Phone: (408) 232-9500FAX: (408) 428-9111

CAUTION

Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:

http://www.77cn.com.cn

FUJITSU QUANTUM DEVICES EUROPE LTD.

Network HouseNorreys Drive

Maidenhead, Berkshire SL6 4FJUnited Kingdom

TEL: +44 (0) 1628 504800FAX: +44 (0) 1628 504888

Do not put this product into the mouth.

Do not alter the form of this product into a gas, powder, or liquid

through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.

FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD.Hong Kong Branch

FUJITSU QUANTUM DEVICES LIMITED

Business Development Division

11th Floor, Hachioji Daiichi-Seimei Bldg.3-20-6 Myojin-cho

Hachioji-city, Tokyo 192-0046, JapanTEL: +81-426-43-5885FAX: +81-426-43-5582

Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,Kowloon, Hong KongTEL: +852-23770226FAX: +852-23763269

Fujitsu Limited reserves the right to change products and specifications without notice.The information does not convey any license under rights of Fujitsu Limited or others.

©2002 FUJITSU COMPOUND SEMICONDUCTOR, INC.Printed in U.S.A. FCSI0302M200

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