DDTD113EU-7-F;DDTD113ZU-7-F;DDTD114EU-7-F;DDTD114GU-7-F;DDTD

时间：2026-01-20

NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR

Features

Epitaxial Planar Die Construction

Complementary PNP Types Available (DDTB) Built-In Biasing Resistors, R1, R2

Lead Free/RoHS Compliant Version (Note 2) "Green" Device, Note 3 and 4

SOT-323 Dim A B C D

Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10

Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18

Mechanical Data

Case: SOT-323

Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram

Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe).

Marking Information: See Table Below & Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate)

R2 (NOM)

1K 2.2K 4.7K 10K 4.7K 10K 10K 10K OPEN OPEN OPEN 10K

MARKING N60 N61 N62 N63 N64 N65 N66 N67 N69 N70 N71 N72

0.65 Nominal

E G H J K L M

0° 8° α

All Dimensions in mm

P/N R1 (NOM) DDTD113EU 1K DDTD123EU 2.2K DDTD143EU 4.7K DDTD114EU 10K DDTD122JU 0.22K DDTD113ZU 1K DDTD123YU 2.2K DDTD133HU 3.3K DDTD123TU 2.2K DDTD143TU 4.7K DDTD114TU 10K DDTD114GU 0

GND(0)

Schematic and Pin Configuration

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Supply Voltage, (3) to (2) Input Voltage, (1) to (2) DDTD113EU DDTD123EU DDTD143EU DDTD114EU DDTD122JU DDTD113ZU DDTD123YU DDTD133HU Input Voltage, (2) to (1) DDTD123TU DDTD143TU DDTD114TU DDTD114GUOutput Current All Power Dissipation

Thermal Resistance, Junction to Ambient Air (Note 1)Operating and Storage Temperature Range

Notes:

Symbol VCC

VIN

Value 50 -10 to +10 -10 to +12 -10 to +30 -10 to +40 -5 to +5 -5 to +10 -5 to +12 -6 to +20

5 500 200 625 -55 to +150

Unit V

VEBO (MAX) IC Pd RθJA Tj, TSTG

V mA mW °C/W °C

1. Mounted on FR4 PC Board with recommended pad layout at http://www.77cn.com.cn/datasheets/ap02001.pdf. 2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.77cn.com.cn/products/lead_free/index.php.

4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30382 Rev. 7 - 2 1 of 3

http://www.77cn.com.cn

DDTD (xxxx) U

Electrical Characteristics @TA = 25°C unless otherwise specified R1, R2 Types

Characteristic

DDTD113EUDDTD123EUDDTD143EUDDTD114EUDDTD122JUDDTD113ZUDDTD123YUDDTD133HU DDTD113EU DDTD123EU DDTD143EU DDTD114EU DDTD122JU DDTD113ZU DDTD123YU DDTD133HU DDTD113EUDDTD123EUDDTD143EUDDTD114EUDDTD122JUDDTD113ZUDDTD123YUDDTD133HU DDTD113EUDDTD123EUDDTD143EUDDTD114EUDDTD122JUDDTD113ZUDDTD123YUDDTD133HU

Symbol

Min 0.5 0.5 0.5 0.5 0.5 0.3 0.3 0.3

Typ

Max

Unit

Test Condition

Vl(off) V VCC = 5V, IO = 100μA

Input Voltage

Vl(on)

3.0 3.0 3.0 3.0 3.0 2.0 2.0 2.0 0.3V 7.23.81.80.8828 7.23.62.4 0.5

VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 10mA VO = 0.3V, IO = 30mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA IO/Il = 50mA/2.5mA

Output Voltage

VO(on) V

Input Current Il mA VI = 5V

Output Current IO(off) 33 39 47 56 47 56 56 56

μA VCC = 50V, VI = 0V

DC Current Gain Gl VO = 5V, IO = 50mA

Gain-Bandwidth Product*

* Transistor - For Reference Only

200 MHzVCE = 10V, IE = 5mA, f = 100MHz

Electrical Characteristics @TA = 25°C unless otherwise specified R1-Only, R2-Only Types

Characteristic

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage