VMM650-01F中文资料
发布时间:2021-06-08
发布时间:2021-06-08
元器件交易网
Dual Power
HiPerFETTM Module
Phaseleg ConfigurationPreliminary Data
89111067
NTC
21
VDSS= 100 VID25= 680 ARDS(on)= 1.8 m
3
SymbolVDSSVGSID25ID80IF25IF80
TC = 25°CTC = 80°C(diode) TC = 25°C(diode) TC = 80°C
①①①①
ConditionsTVJ = 25°C to 150°C
Maximum Ratings
100±20680500680500
VVAAAA
Features
HiPerFET TM technology– low RDSon
– unclamped inductive switching (UIS)capability
– dv/dt ruggedness
– fast intrinsic reverse diode– low gate charge thermistor
for internal temperature measurement package
– low inductive current path
– screw connection to high currentmain terminals
– use of non interchangeable
connectors for auxiliary terminalspossible
– Kelvin source terminals for easy drive– isolated DCB ceramic base plate
SymbolConditions
Characteristic Values
(T
= 25°C, unless otherwise specified)
Applications
converters with high power density for– main and auxiliary AC drives ofelectric vehicles
– 4 quadrant DC drives– power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
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