电子元器件RCR1512SI简介
发布时间:2021-06-08
发布时间:2021-06-08
N沟道增强模式场效应晶体管特点VDS (五) = 60伏 编号= 0.24 低RDS(ON )的高密度的单元设计。电压控制小信号开关。坚固和可靠的。高饱和电流的能力。
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N沟道增强模式场效应晶体管特点VDS (五) = 60伏 编号= 0.24 低RDS(ON )的高密度的单元设计。电压控制小信号开关。坚固和可靠的。高饱和电流的能力。
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FF CHAOACTRRESTICS DraIniS-urceo rBekdaonw oVltgae ero ZGae toVtlae Dgrin aCrurnt Geaet -oBydLe kaae V(Bg)RDSSI DSSIGSS VSG= 0 V, ID= 1µ0 VDSA 6=0 V VG, S 0 V=V G S=20±,V VD= 0 S ONV HARACCTERSIICT SaGte hreThosdlVolt ge Sattaic Drain-SuorecOn -Resstaicn eO-SnatetD rin Curarnt Feoward rTranscnoudtancc eGSV (T) RHS(ON)D I(DON) FS VGS=D GSV, I= 250DµA VGS 1=0,VID= 5 0 m0AV G= S.54V I,D= 0 m5A VS G= 01,V DSV 2≥VD S(ON)V DS 2≥DV (SO)N, I=D2 00 m 1A -5-00 08 2. 1-27-0032 0 .5 27. 53.5 1--Am m VSΩ0 6------1±100 Vµ AAn
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N沟道增强模式场效应晶体管特点VDS (五) = 60伏 编号= 0.24 低RDS(ON )的高密度的单元设计。电压控制小信号开关。坚固和可靠的。高饱和电流的能力。
RCR1512SI
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Typical Performance Characteristics
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