元器件交易网

NTD4809NH

TYPICAL PERFORMANCE CURVES

C, CAPACITANCE (pF)

0.5

100

t, TIME (ns)

10

100

1

1

10

RG, GATE RESISTANCE (OHMS)0.80.9

VSD, SOURCE TO DRAIN VOLTAGE (VOLTS)

0.60.71.0

Figure 9. Resistive Switching TimeVariation vs. Gate Resistance

EAS, SINGLE PULSE DRAIN TO SOURCEAVALANCHE ENERGY (mJ)

1000ID, DRAIN CURRENT (AMPS)

100

Figure 10. Diode Forward Voltage vs. Current

25

10

1

VDS, DRAIN TO SOURCE VOLTAGE (VOLTS)

5075100125150TJ, JUNCTION TEMPERATURE (°C)

175

Figure 11. Maximum Rated Forward Biased

Safe Operating AreaFigure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature