NTD4809NH-1G中文资料(3)
发布时间:2021-06-06
发布时间:2021-06-06
元器件交易网
NTD4809NH
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
DRAIN SOURCE DIODE CHARACTERISTICSForward Diode Voltage
VSD
VGS = 0 V,IS = 30 A
TJ = 25°CTJ = 125°C
0.950.8315.6
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
10.65.07.5
nCns
1.2
V
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery TimeCharge TimeDischarge TimeReverse Recovery TimePACKAGE PARASITIC VALUESSource InductanceDrain Inductance, DPAKDrain Inductance, IPAKGate InductanceGate Resistance
tRRtatbQRR
LSLDLDLGRG
TA = 25°C
2.490.01641.883.460.75
nH
W
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