元器件交易网

NTD4809NH

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Junction to Case (Drain)Junction to TAB (Drain)

Junction to Ambient Steady State (Note 1)Junction to Ambient Steady State (Note 2)

1.Surface mounted on FR4 board using 1 in sq pad size, 1 oz Cu.

2.Surface mounted on FR4 board using the minimum recommended pad size.

SymbolRqJCRqJC TABRqRValue2.93.574116

Unit°C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

OFF CHARACTERISTICS

Drain to Source Breakdown VoltageDrain to Source Breakdown VoltageTemperature CoefficientZero Gate Voltage Drain Current

V(BR)DSSV(BR)DSS/TJ

IDSS

VGS = 0 V,VDS = 24 V

TJ = 25°CTJ = 125°C

VGS = 0 V, ID = 250 mA

30

25

1.010"100

nAVmV/°CmA

Symbol

Test Condition

Min

Typ

Max

Unit

Gate to Source Leakage CurrentON CHARACTERISTICS (Note 3)Gate Threshold Voltage

Negative Threshold Temperature CoefficientDrain to Source On Resistance

IGSSVDS = 0 V, VGS = "20 V

VGS(TH)VGS(TH)/TJRDS(on)

VGS = VDS, ID = 250 mA

1.5

5.7

2.5VmV/°C

VGS = 10 to11.5 VVGS = 4.5 V

ID = 30 AID = 15 AID = 30 AID = 15 A

7.07.010.459.959.0

9.0mW

12.5

Forward TransconductanceCHARGES AND CAPACITANCESInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceTotal Gate ChargeThreshold Gate ChargeGate to Source ChargeGate to Drain ChargeTotal Gate Charge

SWITCHING CHARACTERISTICS (Note 4)Turn On Delay TimeRise Time

Turn Off Delay TimeFall Time

Turn On Delay TimeRise Time

Turn Off Delay TimeFall Time

gFSVDS = 15 V, ID = 15 A

S

CissCossCrssQG(TOT)QG(TH)QGSQGDQG(TOT)

VGS = 11.5 V, VDS = 15 V,

ID = 30 AVGS = 4.5 V, VDS = 15 V,

ID = 30 AVGS = 0 V, f = 1.0 MHz,

VDS = 12 V

159633119012.52.45.35.129.3

15

pF

nC

nC

td(on)trtd(off)tftd(on)trtd(off)tf

VGS = 11.5 V, VDS = 15 V,ID = 15 A, RG = 3.0 WVGS = 4.5 V, VDS = 15 V,ID = 15 A, RG = 3.0 W

12.020145.07.018223.0

ns

ns

3.Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4.Switching characteristics are independent of operating junction temperatures.