22

2

Vol.22No.2April2008

2008

4

CHINESEJOURNALOFMATERIALSRESEARCH

1

1,2

1.2.

215006

210093

(PLD)

Si(100)YSZ

(YSZ)

,

XRD

,

SEM

AFM

,

200–650

.,

:

YSZ

,

300–500

(111)

550

(100)

.YSZPLD,

,

.

,

Si(100)

YSZ

.

,YSZ

,PLD

,

O484

1005-3093(2008)02-0130-05

Theorientationgrowthofyttria–stabilizedzirconiathin lms

underdi erentsubstratetemperatures

WENBo1

SUXiaodong1,2

1.JiangsuKeyLaboratoryofthin lms,DepartmentofPhysics,SuzhouUniversity,Suzhou215006

http://boratoryofSolidStateMicrostructures,NanjingUniversity,Nanjing210093

ManuscriptreceivedJune20,2007;inrevisedformDecember11,2007.

*TowhomCorrespondenceshouldbeaddressed,Tel:(0512)65112597,E–mail:xdsu@http://

ABSTRACTByusingpulsedlaserdeposition(PLD)technology,aseriesofyttria-stabilizedzirconia lmshavebeendepositedonSi(100)substrates,whichwereheatedtothedi erenttemperaturesbetween200–650.TheorientationgrowthofYSZthin lmswasanalyzedbyXRD,themicrostructureofYSZ lmswasobservedbySEMorAFM,andthepreferredgrowthofYSZ lmsfordi erentsubstratetemperatureswasinvestigated.Theresultsshowedthatwhenthesubstratetemperaturewaslow(between300–500),YSZgrainshada(111)preferentialgrowthduetoitslowersurfacepotentialenergycomparetothe(100),whenthesubstratetemperaturewashigherthan550,YSZ lmsformedlargegrainswith(100)preferentialgrowth.Thereforethequalityof(100)orientedYSZ lmshavebeenimprovedbygrowingthe lmsathighersubstratetemperature.

KEYWORDSinorganicnon-metallicmaterials,YSZ lm,PLD,orientationgrowth,substratetem-perature

(YSZ)

[1 7]

,

Si

,

.

Si

YBCO.

;

,

BSCCO,

[8 10]

;

Si

:

,

,

.

;YSZ

.

,

.Si

20

Si

,

SrTiO3LaAlO3MgO

YSZ,

YSZ

2007

6

;2007

12

11

.

,

,

.

,

:

Y

YSZ

Si

2

:

131

.

RigakuD/Max2500

XRD

–

(sol–gel)

YSZ

;

Kosaka

ET350

[11 13]

;

YSZ

.

,

,

(SEM)

;

,

;sol–gel

SOLVER

NT-MDT

(AFM)

;,

YSZ.

,

.

,

[8]

(PLD)

2

2.1

YSZ

,

,

;

,

1

,

YSZ

,

.

,PLD

ZrO2

.

Y

YSZ

,YSZ

.

(mol

)

[14]

.

9%

,

;

,Y

,

YSZ

,

,

.

[15]

.

,

9%YSZ

1

.

,

,,

Y2O3

9%

99%

.

ZrO2

,

12h

.

YSZ

.

600.

1

9%YSZ

Si

4h,

(

.Qian

[9]

,

,YSZ(100)45 ,

250MPa)

22mm6h.

,

Si(100)

,

(100)

1300

,

110

Si 100

,

,

YSZ

.

,

Si(100),

YSZ

.

HF

,

.

,

5cm.

1Pa

.

20Pa

,

.

LambdaPhysik

KrF

YSZ

,

YSZ

.

248nm,

5Hz,

1–2J/cm,

2

90min,

1

XRD

200,350,450,500,550,600,650.

1

Si

Fig.1XRDpatternofYSZtargetunder1300

tering

9%YSZ

sin-

Table1ParametercomparisonbetweenSiand9mol%YSZ

CrystalsSi9%YSZ*

Crystallatticeconstant/nm

0.5430.515

Meltingpoint/

14102700

Expandco cient/

2.59×10 610.3×10 6

Crystalstructure

DiamondCubic uorite

Crystallatticeconstantof9%YSZ lmwascalculatedfromcrystallatticeconstantofZrOandaccordingtoVergardlaw

132

22

,

,

0.2%.

,

,

2

YSZ1).2.2

Si

(

YSZ/SiSi(200)

,

XRD

33

.

200

,

,

YSZYSZ

,

Si

1nm

,

YSZ

,

;

,

,

nm[8].Si

YSZ

,

350

(111)

.

120nm,

200nm

YSZ

500

,YSZ

Si

[9]

.

(111)

,

[16]

.

,(111)

(90min)

YSZ,

,

,YSZ

2.

YSZ

,,

YSZ

,

320nm

.

550

(200)

,

(111)

.

650

,(200)

,

(111)

(311)

.(200)

,

,

.

,XRD

(111)

(200)

YSZ

,

YSZ.

Si

(100)

XRD

Scherrer

YSZ,

(

3).

(111)

(200),

.

XRDD

,YSZ

X

D=kλ(βcosθ),

k=0.89,β

,λ=0.15406nm

Cu

,

θ

.

3

,

,YSZ(111)

,

;

550

,YSZ

(100)

,(100)

.

650

(100)

550

.

,

2

YSZ/Si

XRD

650

YSZ

,(200)

Fig.2XRDpatternsofYSZ/Siwithdi erentsub-stratetemperatures

3

YSZ

.

,

.

XRD

,

Table3CalculationofgrainsizesbasedonXRDdata

Crystalorient

β/( )2θ/( )D/nm

3501110.70829.86320.04

450

100———

1110.44630.08431.83

550

100———

1110.45830.12931.00

600

100

1110.36230.09539.22

650

100

1110.56530.05925.13

1000.19434.87974.08

0.59634.88324.11

0.24034.87659.88

2

:

133

(300

),

,

,

,

,

(100)

,

YSZ

;

300

500

.

,(111)

;

,

YSZ

[8]

(111)

(100)

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