NSS30101LT1G;中文规格书,Datasheet资料

时间：2025-07-11

NSS30101LT1G30 V, 2 A, Low VCE(sat)NPN Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

Typical application are DC DC converters and power managementin portable and battery powered products such as cellular and cordlessphones, PDAs, computers, printers, digital cameras and MP3 players.Other applications are low voltage motor controls in mass storageproducts such as disc drives and tape drives. In the automotiveindustry they can be used in air bag deployment and in the instrumentcluster. The high current gain allows e2PowerEdge devices to bedriven directly from PMU’s control outputs, and the Linear Gain(Beta) makes them ideal components in analog amplifiers.

http://www.77cn.com.cn

30 VOLTS2.0 AMPS

NPN LOW VCE(sat) TRANSISTOREQUIVALENT RDS(on) 100 mW

COLLECTOR

1EMITTER

These Devices are Pb Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C)

Rating

Collector-Emitter VoltageCollector-Base VoltageEmitter-Base VoltageCollector Current ContinuousCollector Current Peak

SymbolVCEOVCBOVEBOICICM

Max30505.01.02.0

UnitVdcVdcVdcAA

SOT 23 (TO 236)

CASE 318STYLE 6

THERMAL CHARACTERISTICS

Characteristic

Total Device DissipationTA = 25°C

Derate above 25°CThermal Resistance,Junction to AmbientTotal Device DissipationTA = 25°C

Derate above 25°CThermal Resistance,Junction to AmbientTotal Device Dissipation(Single Pulse < 10 sec.)Junction and StorageTemperature Range

SymbolPD (Note 1)

Max3102.5

RθJA (Note 1)

PD (Note 2)

4037105.7

RθJA (Note 2)PDsingle

TJ, Tstg

176575

55 to+150

UnitmWmW/°C°C/WmWmW/°C°C/WmW

MARKING DIAGRAM

VS6MG

VS6= Specific Device CodeM= Date Code*G= Pb Free Package

(Note: Microdot may be in either location)*Date Code orientation and/or overbar mayvary depending upon manufacturing location.

ORDERING INFORMATION

°C

DeviceNSS30101LT1G

PackageSOT 23(Pb Free)

Shipping 3000/Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1.FR 4 @ Minimum Pad.

2.FR 4 @ 1.0 X 1.0 inch Pad.

For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011/D.

August, 2009 Rev. 1

Publication Order Number:

NSS30101L/D

NSS30101LT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector Emitter Breakdown Voltage(IC = 10 mAdc, IB = 0)Collector Base Breakdown Voltage(IC = 0.1 mAdc, IE = 0)Emitter Base Breakdown Voltage(IE = 0.1 mAdc, IC = 0)Collector Cutoff Current(VCB = 30 Vdc, IE = 0)Collector Emitter Cutoff Current(VCES = 30 Vdc)Emitter Cutoff Current(VEB = 4.0 Vdc)

V(BR)CEOV(BR)CBOV(BR)EBOICBOICESIEBO

Vdc

30505.0

Vdc

0.10.10.1

mAdcmAdcmAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)(IC = 50 mA, VCE = 5.0 V)(IC = 0.5 A, VCE = 5.0 V)(IC = 1.0 A, VCE = 5.0 V)

Collector Emitter Saturation Voltage (Note 3)(IC = 1.0 A, IB = 100 mA)(IC = 0.5 A, IB = 50 mA)(IC = 0.1 A, IB = 1.0 mA)Base Emitter Saturation Voltage (Note 3)(IC = 1.0 A, IB = 0.1 A)Base Emitter Turn on Voltage (Note 3)(IC = 1.0 mA, VCE = 2.0 V)Cutoff Frequency

(IC = 100 mA, VCE = 5.0 V, f = 100 MHzOutput Capacitance (f = 1.0 MHz)

3.Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%

hFE

300300200 100

900

0.2000.1250.075

1.1

MHz

VCE(sat)

VBE(sat)VBE(on)fTCobo

1.00.90.80.7VCE (V)

0.60.50.40.30.20.10