IS61LV10248中文资料

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IS61LV10248

1M x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

High-speed access times: 8, 10 ns

High-performance, low-power CMOS process Multiple center power and ground pins forgreater noise immunity

Easy memory expansion with CE and OEoptions

CE power-down

Fully static operation: no clock or refreshrequired

TTL compatible inputs and outputs Single 3.3V power supply Packages available:

– 48-ball miniBGA (9mm x 11mm)– 36-ball miniBGA (9mm x 11mm)– 44-pin TSOP (Type II) Lead-free available

ISSI

APRIL 2006

®

DESCRIPTION

The ISSI IS61LV10248 is a very high-speed, low power,

1M-word by 8-bit CMOS static RAM. The IS61LV10248 isfabricated using ISSI's high-performance CMOS technol-ogy. This highly reliable process coupled with innovativecircuit design techniques, yields higher performance andlow power consumption devices.

When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down with CMOS input levels.

The IS61LV10248 operates from a single 3.3V powersupply and all inputs are TTL-compatible.

The IS61LV10248 is available in 48 ball mini BGA, 36-ballmini BGA, and 44-pin TSOP (Type II) packages.

FUNCTIONAL BLOCK DIAGRAM

Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any timewithout notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised toobtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — — 1-800-379-4774

Rev.C04/13/06

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