MUN5313DW1T1G中文资料
时间:2026-01-12
时间:2026-01-12
元器件交易网http://www.77cn.com.cn
MUN5311DW1T1 Series
Preferred Devices
Dual Bias ResistorTransistors
NPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Network
The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base emitter resistor. These digital transistors aredesigned to replace a single device and its external resistor biasnetwork. The BRT eliminates these individual components byintegrating them into a single device. In the MUN5311DW1T1 series,two complementary BRT devices are housed in the SOT 363 packagewhich is ideal for low power surface mount applications where boardspace is at a premium.
Features
http://www.77cn.com.cn
Simplifies Circuit DesignReduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and ReelPb Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, minus sign for Q1 (PNP) omitted)
Rating
Collector-Base VoltageCollector-Emitter VoltageCollector Current
SymbolVCBOVCEOIC
Value5050100
UnitVdcVdcmAdc
THERMAL CHARACTERISTICS
(One Junction Heated)Total Device DissipationTA = 25°C
Derate above 25°CThermal Resistance Junction-to-Ambient
Characteristic
(Both Junctions Heated)Total Device DissipationTA = 25°C
Derate above 25°
CThermal Resistance Junction-to-AmbientThermal Resistance Junction-to-Lead
Junction and Storage TemperatureSymbolPD
Max187 (Note 1)256 (Note 2)1.5 (Note 1)2.0 (Note 2)670 (Note 1)490 (Note 2)
Max250 (Note 1)385 (Note 2)2.0 (Note 1)3.0 (Note 2)493 (Note 1)325 (Note 2)188 (Note 1)208 (Note 2) 55 to +150
UnitmWmW/°C°C/W
RqJA
ORDERING AND DEVICE MARKING
INFORMATION
See detailed ordering, shipping, and specific markinginformation in the table on page 2 of this data sheet.
SymbolPD
Unit
mWmW/°C
°C/W°C/W°C
Preferred devices are recommended choices for future useand best overall value.
Rq
JARqJLTJ, Tstg
元器件交易网http://www.77cn.com.cn
MUN5311DW1T1 Series
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
Device
MUN5311DW1T1MUN5311DW1T1GMUN5312DW1T1MUN5312DW1T1GMUN5313DW1T1MUN5313DW1T1GMUN5314DW1T1MUN5314DW1T1GMUN5315DW1T1MUN5315DW1T1GMUN5316DW1T1MUN5316DW1T1GMUN5330DW1T1MUN5330DW1T1GMUN5331DW1T1MUN5331DW1T1GMUN5332DW1T1MUN5332DW1T1GMUN5333DW1T1MUN5333DW1T1GMUN5334DW1T1MUN5334DW1T1GMUN5335DW1T1MUN5335DW1T1G
PackageSOT 363SOT 363(Pb Free)SOT 363SOT 363(Pb Free)SOT 363SOT 363(Pb Free)SOT 363SOT 363(Pb Free)SOT 363SOT 363(Pb Free)SOT 363SOT 363(Pb Free)SOT 363SOT 363(Pb Free)SOT 363SOT 363(Pb Free)SOT 363SOT 363(Pb Free)SOT 363SOT 363(Pb Free)SOT 363SOT 363(Pb Free)SOT 363SOT 363(Pb Free)
Marking11
R1 (K)10
R2 (K)10
Shipping
122222
134747
141047
1510∞
164.7∞
3000/Tape & Reel
301.01.0
312.22.2
324.74.7
334.747
342247
352.247
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.
元器件交易网http://www.77cn.com.cn
MUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, minus sign for Q1 (PNP) omitted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)Emitter-Base Cutoff Current(VEB = 6.0 V, IC = 0)
MUN5311DW1T1MUN5312DW1T1MUN5313DW1T1MUN5314DW1T1MUN5315DW1T1MUN5316DW1T1MUN5330DW1T1MUN5331DW1T1MUN5332DW1T1MUN5333DW1T1MUN5334DW1T1MUN5335DW1T1
ICBOICEOIEBO
5050
1005000.50.20.10.20.91.94.32.31.50.180.130.2
nAdcnAdcmAdc
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)3.Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
V(BR)CBOV(BR)CEO
VdcVdc
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, minus sign for Q1 (PNP) omitted) (Continued)
Characteristic
ON CHARACTERISTICS (Note 4)DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5311DW1T1MUN5312DW1T1MUN5313DW1T1MUN5314DW1T1MUN5315DW1T1MUN5316DW1T1MUN5330DW1T1MUN5331DW1T1MUN5332DW1T1MUN5333DW1T1MUN5334DW1T1MUN5335DW1T1MUN5311DW1T1MUN5312DW1T1MUN5313DW1T1MUN5314DW1T1MUN5335DW1T1MUN5330DW1T1MUN5331DW1T1MUN5315DW1T1MUN5316DW1T1MUN5332DW1T1MUN5333DW1T1MUN5334DW1T1
hFE
356080801601603.08.015808080
601001401403503505.01530200150140
Vdc
0.250.250.250.250.250.250.250.250.250.250.250.25
Symbol
Min
Typ
Max
Unit
Collector-Emitter Saturation Voltage(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
(IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA)
元器件交易网http://www.77cn.com.cn
MUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, minus sign for Q1 (PNP) omitted) (Continued)
Characteristic
ON CHARACTERISTICS (Note 4)Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
MUN5311DW1T1MUN5312DW1T1MUN5314DW1T1MUN5315DW1T1MUN5316DW1T1MUN5330DW1T1MUN5331DW1T1MUN5332DW1T1MUN5333DW1T1MUN5334DW1T1MUN5335DW1T1MUN5313DW1T1MUN5311DW1T1MUN5312DW1T1MUN5313DW1T1MUN5314DW1T1MUN5333DW1T1MUN5334DW1T1MUN5335DW1T1MUN5330DW1T1MUN5315DW1T1MUN5316DW1T1MUN5331DW1T1MUN5332DW1T1MUN5311DW …… 此处隐藏:8679字,全部文档内容请下载后查看。喜欢就下载吧 ……
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