AO4610

N-Channel + Schottky Electrical Characteristics (TJ=25°C unless otherwise noted)Symbol

Parameter

ConditionsID=250µA, VGS=0V VDS=24V, VGS=0V

TJ=55°C

VDS=0V, VGS=±20VVDS=VGS ID=250µAVGS=4.5V, VDS=5VVGS=10V, ID=8.5A

RDS(ON)gFSVSDIS

Static Drain-Source On-Resistance

VGS=4.5V, ID=6.6A

Forward Transconductance

VDS=5V, ID=8.5A

10

Body-Diode+Schottky Forward VoltageIS=1AMaximum Body-Diode+Schottky Continuous Current

TJ=125°C

140

15.522.323230.75

15.5

1040

VGS=0V, VDS=15V, f=1MHzVGS=0V, VDS=0V, f=1MHz

1801100.719.2

VGS=10V, VDS=15V, ID=8.5A

9.362.64.25.2

VGS=10V, VDS=15V, RL=1.8 , RGEN=3

IF=8.5A, dI/dt=100A/µsIF=8.5A, dI/dt=100A/µsIF=1.0A

VR=30V

VR=30V, TJ=125°CVR=30V, TJ=150°C

CT

Junction Capacitance

VR=15V

4.417.33.316.76.70.450.0073.21237

0.50.051020

pFmA

182728

1.8

1003

Min30

25

Typ

Max

UnitsVµAnAVAm SVApFpFpF nCnCnCnCnsnsnsnsnsnCV

STATIC PARAMETERSBVDSSDrain-Source Breakdown VoltageIDSSIGSSVGS(th)ID(ON)

Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain current

DYNAMIC PARAMETERSCissInput CapacitanceCossOutput Capacitance (FET+Schottky)CrssRg

Reverse Transfer CapacitanceGate resistance

SWITCHING PARAMETERSQg(10V)Total Gate ChargeQg(4.5V)Total Gate ChargeQgsQgdtD(on)trtD(off)tftrrQrr

Gate Source ChargeGate Drain ChargeTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall Time

Body-Diode+Schottky Reverse Recovery TimeBody-Diode+Schottky Reverse Recovery Charge

SCHOTTKY PARAMETERSVFForward Voltage DropIrm

Maximum reverse leakage current

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

2

E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4: July 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.