P4C198/198L, P4C198A/198AL

AC CHARACTERISTICS—READ CYCLE

(VCC = 5V ± 10%, All Temperature Ranges)(2)

-10

Sym.tRCtAAtACtOHtLZtHZtOEtOLZ

ParameterRead Cycle TimeAddress AccessTimeChip EnableAccess TimeOutput Hold fromAddress ChangeChip Enable toOutput in Low ZChip Disable toOutput in High ZOutput EnableLow to Data ValidOutput Enable toOutput in Low Z

2

60

10

22

66

2

10

1010

2212

-12-15

151212

227 7

27

12

159

089

2

1515

2220

-20

252020

22

1012

29

20

-25

352525

22

1015

2

10

25

-35

453535

22

1425

2

14

35

-45

ns4545

nsnsnsns1530

nsnsns15

nsns45

ns

MinMaxMin

MaxMinMaxMinMaxMinMaxMinMaxMinMaxUnit

tOHZOutput Disable to

Output in High ZtPUtPD

Chip Enable toPower Up TimeChip Disable toPower Down Time

READ CYCLE NO.1 (OEOE controlled)(5)

Notes:

5.WE is HIGH for READ cycle.

Document # SRAM113 REV APage 4 of 13