一直被模仿,从未被超越!

高SiCp或高Si含量电子封装材料研究进展/钟　

鼓等

车领域的电子封装,其性能优越性得到凸现。我国对SiCp/Al复合材料的研制始于20世纪90年代后期,现已初步完成了复杂形状预制件的注射成形和构件近净成形研究,并在产品中得到应用,与国外同体积分数SiCp/Al封装材料相比CTE值基本接近,但热导率还存在较大差距。高Si含量Al2Si合金用于电子封装的制备国内最近几年才有报道,且成形方法还比较单一。目前各种制备方法成本均比较高,产品还难以在大规模商业生产中推广,因此研究和开发适于规模化生产的净成形工艺具有重要意义。

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20ShiZhongliang,ShijiroOchiai,MasakiHojo.Joiningchar2

acteristicsofoxidizedSiCparticlesreinforcedAl2Mgmatrixcompositepreparedbyreactioninfiltrationprocessing.JMa2terRes,2001,16(2):400

21HemambarCh,RaoBS,JayaramV.Al2SiCelectronic

packageswithcontolledthermalexpansioncoefficientbyanewmethodofpressurelessinfiltration.MaterManufProc,2001,16(6):779

22Rodriguez2ReyesM,Pech2CanulMI,Lopez2CuevasJ,et

al.LimitingthedevelopmentofAl4C3topreventdegradationofAl/pSciTechn,2006,66:1056

23Aguilar2MartinezJA,Pech2CanulMI,Rodriguez2Reyes

M,etal.EffectofprocessingparametersonthedegreeofinfiltrationofSiCpperformsbyAl2Si2Mgalloys.MaterLett,2003,57:4332

24Ortega2CelayaF,Pech2CanulMI,Lopez2CuevasJ,etal.

MicrostructureandimpactbehaviorofAl/SiCpcompositesfabricatedbypressurelessinfiltrationwithdifferenttypesofSiCp.JMaterProcTechn,2006,(10):1016

25LeeHS,HongSH.Pressurecastingprocess

andthermophysicalpropertiesofwolumefractionAlmetalSciTechn,2003,R.ofReinforcedMetals.

PublicationsLtd,Switzerland,112

27MarkAOcchionero,RobertAHay,RichardWAdams,et

al.Cost2effectivemanufacturingofaluminumsiliconcarbideelectronicpackages.InternationalSymposiumonAsvancedPackagingMaterials,19991118

28童震松,沈卓身.金属封装材料的现状及发展.电子与封装,

2005,5(3):6

29MarkAOcchionero,RichardWAdams.AlSiCandAlSiC

hybridcompositesforflipchips,optoelectronics,powerandhighbrightnessLEDthermalmanagementsolutions.6thIn2ternationalConferenceonElectronicPackagingTechnology,20051576

30/reference/MetalMatrixCompos2

ite.aspx

31/products/sku.cfm?Pro2

ductCAtegory_Id=4293&Product_Id=1312&SKU_Id=1787

32/Articles/ArticleDisplay.cfm?

Section=Articles&Subsection=Display&ARTICLEID=229921

33/chinese/c_prduct.asp?id=3

34DavidMJacobson,AndrewOgilvy,AlanLeatham.Appli2

cationsoflightweightCEalloys,JointCapitalChapterIMAPS2SMTA,2007.(7):4

35Seok,Hyun2KwangLee,Jae2ChulLee,etal.Methodfor

Pat,28546512004207206

36杨培勇,郑子樵,蔡杨.Si2Al电子封装材料粉末冶金制备工

艺研究.稀有金属,2004,28(1):160

参考文献

1

ZhangQiguo,ZhangHongxiang,GuMingyuan.StudiesonthefractureandflexuralstrengthofAl/Sipcomposite.Ma2terLett,2004,(58):3545

MolinaJM,PineroE,NarcisoJ,etal.Liquidmetalinfiltra2tionintoceramicparticlepreformswithbimodalsizedistri2butions.CurrentOpinioninSolidStateandMaterSci,2005,9:202

HoggSC,LambourneA,OgilvyA,etal.MicrostructuralcharacterizationofsprayformedSi230Alforthermalman2agementapplications.ScrMater,2006,55:111

MarkAOcchionero,RichardWAdams.铝碳化硅为电子封装提供热管理解决方案.电子产品世界,2004,10(B):84刘正春,王志法,姜国圣..料科学与工程,2001,24(2):49

RobertRIrving.,黄强,顾明元..报,2000,14(9)黄强,金燕萍,顾明元.电子封装用金属基复合材料的制备.材料导报,2002,16(9):18

王文明,潘复生.P/M制备SiCp复合材料的研究现状.粉末冶金技术,2004,22(6):364

http://www.inseto.co.uk/products/micromaterials/polese2heatsinkcompositemetals.shtml

王晓阳,朱丽娟,刘越.粉末冶金法制备AlSiC电子封装材料及性能.电子与封装,2007,7(5):9

pSciTechn,2005,65(15216):2526

/technologies.heml

Aghajanian.Methodofformingmetalmatrixcompositebodiesbyaspontaneousinfiltrationprocess,Pat,5249621.1993210205

曲选辉,何新波,任淑彬,等.制备高体积分数碳化硅颗粒增强铝基复合材料零件方法.CNPat,200510011102.4.2005210201

顾明元,张其国.高体积分数硅颗粒增强铝基复合材料的制备方法.CNPat,200510024032.6.2005210202

RaoBS,JayaramV.PressurelessinfiltrationofAl2MgbasedalloysintoAl2O3preforms:mechanismsandphenome2nology.ActaMater,2001,49:2373刘贯军,李文芳,杜军.铝、镁基复合材料的润湿性探究.铸造,2006,55(9):911

崔华,郝斌,张济山.金属基复合材料制备中有害界面反应的控制和润湿性的改善工艺.铸造,2006,55(8):817

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(责任编辑　邓小军)