MEMORY存储芯片MT29F256G08AUCABH3-10A中文规格书(3)
发布时间:2021-06-07
发布时间:2021-06-07
Table 12: Feature Addresses 80h: Programmable I/O Drive Strength
Note:
1.The programmable drive strength feature address is used to change the default I/O
drive strength. Drive strength should be selected based on expected loading of the memory bus. This table shows the four supported output drive strength settings. The default drive strength is full strength. The device returns to the default drive strength mode when the device is power cycled. AC timing parameters may need to be relaxed if I/O drive strength is not set to full.
Table 13: Feature Addresses 81h: Programmable R/B# Pull-Down Strength
Note:
1.This feature address is used to change the default R/B# pull-down strength. Its strength
should be selected based on the expected loading of R/B#. Full strength is the default,power-on value.
1Gb x8, x16: NAND Flash Memory
Feature Operations
PDF: 09005aef83e5ffed
m68a_1gb_nand.pdf - Rev. L 10/12 EN