MMDT4413-7-F中文资料
发布时间:2024-11-10
发布时间:2024-11-10
COMPLEMENTARY NPN / PNP
SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Complementary Pair One 4401-Type NPN, One 4403-Type PNP
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3)
SOT-363
Dim
Min 0.10 1.15 2.00 0.30 1.80 — 0.90 0.25 0.10 0°
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8°
A B C D F
0.65 Nominal
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe).
Terminal Connections: See Diagram Marking Information: See Page 5
Ordering & Date Code Information: See Page 5 Weight: 0.006 grams (approximate)
H J K L
C2
B1
E1
M α
All Dimensions in mm
E2B2C1
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range
Symbol PdRθJATj, TSTG
Value 200 625 -55 to +150
Unit mW °C/W °C
Maximum Ratings, NPN 4401 Section @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Symbol VCBOVCEOVEBOIC
NPN4401
60 40 6.0 600
Unit V V V mA
Maximum Ratings, PNP 4403 Section @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http:///datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead.
Symbol VCBOVCEOVEBOIC
PNP4403 -40 -40 -5.0 -600
Unit V V V mA
DS30121 Rev. 8 - 2
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MMDT4413
© Diodes Incorporated
Electrical Characteristics, NPN 4401 Section @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current
ON CHARACTERISTICS (Note 4)
Symbol V(BR)CBOV(BR)CEOV(BR)EBOICEXIBL
Min 60 40 6.0 20 40 80 100 40 0.75 1.0 0.1 40 1.0 250
Max 100 100 300 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 15 20 225 30
Unit V V V nA nA
Test Condition
IC = 100μA, IE = 0 IC = 1.0mA, IB = 0 IE = 100μA, IC = 0
VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V
DC Current Gain hFE
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance
Voltage Feedback Ratio Small Signal Current Gain Output Admittance
Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT)VBE(SAT)CcbCebhiehrehfehoefTtdtrtstf
V V pF pF kΩ x 10 μS MHz ns ns ns ns
IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V IC = 150mA, IB = 15mA IC = 500mA, IBIC = 150mA, IB = 15mA IC = 500mA, IB = 50mA
VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 10V, IC = 20mA, f = 100MHz
VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA
Electrical Characteristics, PNP 4403 Section @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current
ON CHARACTERISTICS (Note 4)
Symbol V(BR)CBOV(BR)CEOV(BR)EBOICEXIBL
Min -40 -40 -5.0 30 60 100 100 20 -0.75 1.5 0.1 60 1.0 200 2 of 5 http://
Max -100 -100 300 -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 15 20 225 30
Unit V V V nA nA
Test Condition
IC = -100μA, IE = 0 IC = -1.0mA, IB = 0 IE = -100μA, IC = 0
VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V
DC Current Gain hFE
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance
Voltage Feedback Ratio Small Signal Current Gain Output Admittance
Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
Notes:
4.
VCE(SAT)VBE(SAT)CcbCebhiehrehfehoefTtdtrtstf
V V pF pF kΩ x 10 μS MHz ns ns ns ns
IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -150mA, VCE = -2.0V IC = -500mA, VCE = -2.0V IC = -150mA, IB = -15mA IC = -500mA, IBIC = -150mA, IB = -15mA IC = -500mA, IB = -50mA
VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = -10V, IC = -1.0mA, f = 1.0kHz
VCE = -10V, IC = -20mA, f = 100MHz
VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA
MMDT4413
© Diodes Incorporated
Short duration pulse test used to minimize self-heating effect.
DS30121 Rev. 8 - 2
DS30121 Rev. 8 - 2
3 of 5 http://
MMDT4413
© Diodes Incorporated
0.5
(V)
EG0.4
LTAO VN0.3
OIRATU0.2
TSA ) AT S 0.1
(E C 01
10
100
1000
IC
, COLLECTOR CURRENT (mA)Fig. 9 Collector Emitter Saturation Voltage
vs. Collector Current (4403)
DS30121 Rev. 8 - 2
4 of 5 MMDT4413
http://
© Diodes Incorporated
V, COLLECTOR TO EMITTER
Ordering Information (Note 5)
Device MMDT4413-7-F
Notes:
Packaging SOT-363
Shipping 3000/Tape & Reel
5. For Packaging Details, go to our website at http:///datasheets/ap02007.pdf.
Marking Information
K13= Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002
M = Month ex: 9 = September
Data Code Key
Year Code
Month Code
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
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Oct O
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Dec D
1998 J
1999 K
2000 L
2001M
2002N
2003P
2004R
2005S
2006T
2007 2008
V U
2009
W
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DS30121 Rev. 8 - 2
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