COMPLEMENTARY NPN / PNP

SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

Complementary Pair One 4401-Type NPN, One 4403-Type PNP

Epitaxial Planar Die Construction

Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3)

SOT-363

Dim

Min 0.10 1.15 2.00 0.30 1.80 — 0.90 0.25 0.10 0°

Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8°

A B C D F

0.65 Nominal

Mechanical Data

Case: SOT-363

Case Material: Molded Plastic. UL Flammability Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe).

Terminal Connections: See Diagram Marking Information: See Page 5

Ordering & Date Code Information: See Page 5 Weight: 0.006 grams (approximate)

H J K L

C2

B1

E1

M α

All Dimensions in mm

E2B2C1

Maximum Ratings, Total Device @TA = 25°C unless otherwise specified

Characteristic

Power Dissipation (Note 1, 2)

Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range

Symbol PdRθJATj, TSTG

Value 200 625 -55 to +150

Unit mW °C/W °C

Maximum Ratings, NPN 4401 Section @TA = 25°C unless otherwise specified

Characteristic

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Symbol VCBOVCEOVEBOIC

NPN4401

60 40 6.0 600

Unit V V V mA

Maximum Ratings, PNP 4403 Section @TA = 25°C unless otherwise specified

Characteristic

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http:///datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead.

Symbol VCBOVCEOVEBOIC

PNP4403 -40 -40 -5.0 -600

Unit V V V mA

DS30121 Rev. 8 - 2

1 of 5 http://

MMDT4413

© Diodes Incorporated

Electrical Characteristics, NPN 4401 Section @TA = 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current

ON CHARACTERISTICS (Note 4)

Symbol V(BR)CBOV(BR)CEOV(BR)EBOICEXIBL

Min 60 40 6.0 20 40 80 100 40 0.75 1.0 0.1 40 1.0 250

Max 100 100 300 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 15 20 225 30

Unit V V V nA nA

Test Condition

IC = 100μA, IE = 0 IC = 1.0mA, IB = 0 IE = 100μA, IC = 0

VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V

DC Current Gain hFE

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance

Voltage Feedback Ratio Small Signal Current Gain Output Admittance

Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time

VCE(SAT)VBE(SAT)CcbCebhiehrehfehoefTtdtrtstf

V V pF pF kΩ x 10 μS MHz ns ns ns ns

IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V IC = 150mA, IB = 15mA IC = 500mA, IBIC = 150mA, IB = 15mA IC = 500mA, IB = 50mA

VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz

VCE = 10V, IC = 20mA, f = 100MHz

VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA

Electrical Characteristics, PNP 4403 Section @TA = 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current

ON CHARACTERISTICS (Note 4)

Symbol V(BR)CBOV(BR)CEOV(BR)EBOICEXIBL

Min -40 -40 -5.0 30 60 100 100 20 -0.75 1.5 0.1 60 1.0 200 2 of 5 http://

Max -100 -100 300 -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 15 20 225 30

Unit V V V nA nA

Test Condition

IC = -100μA, IE = 0 IC = -1.0mA, IB = 0 IE = -100μA, IC = 0

VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V

DC Current Gain hFE

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance

Voltage Feedback Ratio Small Signal Current Gain Output Admittance

Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time

Notes:

4.

VCE(SAT)VBE(SAT)CcbCebhiehrehfehoefTtdtrtstf

V V pF pF kΩ x 10 μS MHz ns ns ns ns

IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -150mA, VCE = -2.0V IC = -500mA, VCE = -2.0V IC = -150mA, IB = -15mA IC = -500mA, IBIC = -150mA, IB = -15mA IC = -500mA, IB = -50mA

VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = -10V, IC = -1.0mA, f = 1.0kHz

VCE = -10V, IC = -20mA, f = 100MHz

VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA

MMDT4413

© Diodes Incorporated

Short duration pulse test used to minimize self-heating effect.

DS30121 Rev. 8 - 2

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