关于多孔硅(9)
时间:2026-01-22
时间:2026-01-22
多孔硅在太阳电池中应用有着很大的 潜力。
R.Bilyalovetal./SolarEnergyMaterials&SolarCells65(2001)477}485485
onecouldincreasethedepositiontemperatureofthethermalCVDprocessinordertominimizepore"lling.Inthatcasehoweverattentionhastobepaidtoastabilizationoftheporouslayer.Researchinvestigationsinthesedirectionsarecurrentlyinprogress.
Acknowledgements
G.BeaucarneandL.StalmansaresupportedbyafellowshipfromIWT(FlemishInstituteforPromotionofScienti"c-TechnologicalResearchintheIndustry).TheauthorsareindebtedtoDr.S.JinandDr.H.BenderforXTEM-analysis,toMr.L.GeenenforSIMS-analysisandtoMr.B.BrijsforRBS-analysis.
References
[1]M.Caymax,M.Eyckmans,J.Nijs,R.Mertens,M.Aucouturier,D.H.Nguyen,T.T.LeHoang,S.N.
Singh,Optimisationoftheblue-responseofscreen-printedsolarcellsonepitaxialthin"lmsubstrates,ProceedingsoftheEighthECPVSEC,Dordrecht,Netherlands,1988,pp.168}173.
[2]W.Zimmermann,S.Bau,F.Haas,K.Schmidt,A.Eyer,Siliconsheetsfrompowderaslowcost
substratesforcrystallinesiliconthin"lmsolarcells,ProceedingsoftheSecondWCPEC,Vienna,Austria,1998,pp.1790}1793.
[3]L.Stalmans,J.Poortmans,M.Caymax,H.Bender,S.Jin,J.Nijs,R.Mertens,Realizationoflight
con"nementinthincrystallineSi"lmsgrownonporoussilicon,ProceedingsoftheSecondWCPEC,Vienna,Austria,1998,pp.124}127.
[4]J.Zettner,M.Thoenissen,Th.Hierl,R.Brendel,M.Schulz,Novelporoussiliconbacksidere#ector
forthinsiliconsolarcells,ProgrPhotovoltaics:Res.Appl.6(1998)423}432.
[5]Y.S.Tsuo,P.Menna,J.R.Pitts,K.R.Jantzen,S.Asher,M.Al-Jassim,T.F.Ciszek,Poroussilicon
gettering,Proceedingsofthe25thIEEEPVSC,Washington,USA,1996,pp.131}134.
[6]M.I.J.Beale,N.G.Chew,A.G.Cullis,D.B.Gasson,R.W.Hardeman,D.J.Robbins,I.M.Young,
AstudyofsiliconMBEonporoussiliconsubstrates,J.Vac.Sci.Technol.B.3(1985)732.
[7]N.Sato,K.Sakaguchi,K.Yamagata,Y.Fujiyama,T.Yonehara,EpitaxialgrowthonporousSifor
anewbondandetchbacksilicon-on-insulator,J.Electrochem.Soc.142(1995)3116.
[8]L.Stalmans,Formationandpropertiesofporoussilicon:potentialbene"tsforphotovoltaicdevices,
Ph.D.Thesis,KULeuven,1999.
[9]G.Beaucarne,Thin"lmcrystallinesiliconsolarcellsonforeignsubstrates,Ph.D.Thesis,KULeuven,
2000.
[10]S.Jin,H.Bender,L.Stalmans,R.Bilyalov,J.Poortmans,R.Loo,M.Caymax,TEMinvestigationof
thecrystallographicqualityofsilicon"lmsgrownepitaxiallyonporoussilicon,J.CrystalGrowth212(2000)119}127.
[11]D.Buttard,G.Dolino,Y.Campidelli,A.Halimaoui,X-raystudyofUHV-CVD"llingofporous
siliconbyGe,JofCrystalGrowth183(1998)294.
[12]I.Teerlinck,P.W.Mertens,H.F.Schmidt,M.Meuris,M.Heyns,Impactoftheelectrochemical
propertiesofSiwafersurfacesonCuoutplatingfromHFsolutions,J.Electrchem.Soc.143(1996)3323.
[13]L.Teerlinck,P.W.Mertens,R.Vos,M.M.Heyns,CudepositiononSisurfacesfromHFsolutionsin
ULSImicrofabrication,AbstactsofEWEPS'96,Meudon,France,1996,p.33
…… 此处隐藏:702字,全部文档内容请下载后查看。喜欢就下载吧 ……下一篇:伺服电机怎么实现扭矩控制