TPS40200-EP中文资料(14)
发布时间：2021-06-05
元器件交易网
SGLS371–JANUARY2007
GENERALINFORMATION(continued)
MOSFETGateDrive
Theoutputdriversinkingcurrentisapproximately200mAandisdesignedtodriveP-channelpowerFETs.WhenthedriverpullsthegatechargeoftheFET,itiscontrollingto–8V,thedrivecurrentfoldsbacktoalowlevelsothathighpowerdissipationonlyoccursduringtheturnonperiodoftheFET.ThisfeatureisparticularlyvaluablewhenturningonaFETathighinputvoltages,whereleavingthegatedrivecurrentonwouldotherwisecauseunacceptablepowerdissipation.
UndervoltageLockout(UVLO)Protection
UVLOprotectionensuresproperstartupofthedeviceonlywhentheinputvoltagehasexceededminimumoperatingvoltage.Undervoltageprotectionincorporateshysteresis,whicheliminateshiccupstartingincaseswhereinputsupplyimpedanceishigh.
Figure28.UndervoltageLockout
Undervoltageprotectionensuresproperstartupofthedeviceonlywhentheinputvoltagehasexceededminimumoperatingvoltage.TheUVLOlevelismeasuredattheVDDpinwithrespecttoGND.Startupvoltageistypically4.3V,withapproximately200mVofhysteresis.Thepartshutsoffatanominal4.1V.AsshowninFigure28whentheinputVDDvoltagerisesto4.3V,the1.3-Vcomparator’sthresholdvoltageisexceededandoccurs.Feedbackfromtheoutputclosestheswitchandshuntsthe200-k resistorsothatanapproximate200-mVlowervoltage,or4.1V,isrequiredbeforethepartshutsdown.
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